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The LRS values are different because of defect control in switching materials.
It varies directly proportional to the device size and inversely proportional to the switching materials' thickness.
CBRAM performance depends on switching materials including different non-oxides and oxides.
The characteristics of many resistive switching materials have been still under study [72 79].
Thanks to using the resistive switching materials, novel transistors have been invented.
In this case, both TE and switching materials were deposited on the BE by a sputtering process.
Figure 11 shows the weight loss of the switching materials as a function of temperature, obtained from thermo-galvanometric measurements.
Abundant resistive switching materials, electrode materials, and their various interfaces are involved in RRAM switching mechanisms which are rather complex.
Even though many groups reported a single-layer switching material, bilayer switching materials showed to be promising.
The switching materials of anion-based devices include transition metal oxides, complex oxides, large bandgap dielectrics, nitrides, and chalcogenides.
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Although many switching materials have been reported for the RRAM applications, the Al2O3 as a switching material has been reported a few [6 9].
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