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The switching cycle is indicated by arrows 1 → 3.
The applied switching cycle is shown in the inset.
The data read on the second switching cycle.
Figure 4b shows the first switching cycle of this device.
Randomly selected 15 ReRAM cells were measured for 100 switching cycle of each device.
First switching cycle of the memory device shows low formation voltage (Vform) +1.5 V.
No RESET current was observed for the first switching cycle of the pristine device.
Failure of the endurance switching cycle is attributable to the Joule heating effect [16].
The endurance switching cycle characteristics of the CDT samples are shown in Figure 7.
A switching cycle consists of the turn-off period followed by the turn-on period.
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The stability of the gasochromic Pt/WO3 film was also evaluated by the switching cycle-life test.
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