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Figure 6 Unipolar resistive switching characteristics.
a Bipolar I V switching characteristics.
Figure 5 I - V switching characteristics.
Figure 7 Self-compliance I - V switching characteristics and fitting.
(a) Resistive switching characteristics of the Cu/SiO2/Pt structure.
Fig. 5 Memory switching characteristics of electrodeposited GeSbTe devices.
Figure 6 I - V switching characteristics and mechanism.
These results indicate a relationship between the switching characteristics and the shape of the interface; therefore, the switching characteristics can be easily controlled by the Cu CDT process.
Device shows bipolar switching characteristics owing to the extra terms added in the model equations.
The switching characteristics and the performance for both modes are investigated.
Unipolar resistive switching characteristics of the Cu/GeO x /W cross-point memory device.
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