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Figure 1 Pulse width dependent switched behavior.
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(c) Resistance switching behavior of the Ni/PCMO/Pt device.
(c) Resistance switching behavior of the Ag/PCMO/Pt device.
The bipolar resistive switching behavior of Ag/BaWO4/FTO device is observed.
The stacked device (1D1R) still represents resistive switching behavior.
(b) Resistance switching behavior of the Au/PCMO/Pt device.
(b) Resistance switching behavior of the Al/PCMO/Pt device.
Both Pt/HfO2/TiO2/HfO2/Pt and Pt/HfO2/TiO2/HfO2/TiN exhibit typical bipolar resistive switching behavior.
The solution electron paramagnetic resonance spectra showed switching behavior.
To achieve uniform switching behavior, the current flowing in the switching layer should be controlled.
The Al/ZrO2/Pt resistive switching memory with bipolar resistive switching behavior is revealed in this work.
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