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The inset diagram in the lower right shows the reset procedure, which can be divided into different resistive stages by altering the negative stop voltage of DC sweeping cycle (V stop).
It even can switch or fluctuate continuously between two levels in the same sweeping cycle, just like the two level fluctuations in tunnel junctions, MOSFETs, and FETs based on p-type semiconducting SWCNTs reported previously [23 25].
With its strong intrinsic current self-limiting ability, CRS implementation capability, and whole sweeping cycle multi-bit property, the double-ended GO-doped silicon oxide-based structure is a promising technique to the future mass production of RRAM.
In summary, with its strong intrinsic current self-limiting ability, CRS implementation capability, and whole sweeping cycle multi-bit property, the double-ended GO-doped silicon oxide-based structure is a promising technique to the future mass production of RRAM for its comprehensive preferable working properties.
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For example, the graphene/PANI-2 aerogel was prepared by 200 CV sweeping cycles.
Figure 3d f also shows the morphology evolution of PANI nanocones corresponding to different CV sweeping cycles.
Instead of applying one large potential in sweeping mode, we have used sweeping cycles with gradually increasing the range (maximum value) in order to avoid large potentials.
This indicates that this DWCNT seems to have different linear conductance for different VD sweeping cycles under almost the same conditions (temperature fluctuations less than 0.05 K).
However, the current in HRS increases after about 100 dc voltage sweeping cycles, which leads to the memory window closing, as shown in Figure 4.
In contrast, an application of negative bias results in a transition from HRS to LRS at certain set voltage (Vset) and this effect is reproducible over several hundreds of voltage sweeping cycles.
The factors that affected the film formation, such as monomer concentration, number of sweeping cycles, sweep rate and limits of potential cycling were investigated in detail.
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