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During the reverse sweep, the device remains in the high-resistance and shows hysteresis.
At last, in another positive sweep, the device will switch to LRS again, with the filament reconnected (inset B).
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For instance, the sweep time of FSVR is listed as 100 μs which is the shortest sweep time the device can achieve, and the same applies to the sweep time of the USRP in continuous FFT mode.
A sweep of the device downward shows the scene as an expanse of sunflowers in bloom.
In dry sweep mode, the device uses either disposable Swiffer sheets or the included washable pads.
A positive sweep switches the device back to the LRS for the reset switching.
In the subsequent sweep cycles, the device sustains its high-resistance state, thus making it a write-once read-many (WORM) memory device.
In the subsequent sweep cycles, the device remains in the high-resistance state and no hysteresis is observed, thus showing WORM memory behavior.
After the nitridation treatment, however, even after more than 109 sweep cycles, the device exhibited a stable HRS/LRS ratio, as in Fig. 2b.
The initial resistance failure can be recovered by a reset operation through a negative TE bias sweep, bringing the device back to the high resistance state (HRS).
In Figure 2, we report the transport characteristics in the first and second sweep cycles for the device with BLG contact.
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