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Surface processing of the BOLD data proceeded through the following steps.
Laser surface processing of nanocrystalline materials is potentially important in the casting industry for improving die life and reducing downtime.
Laser surface processing of the test material, in the main, revealed the presence of β phase, contributing to its enhanced hardness.
The aim of this paper is to provide a critical literature review on the utilization of atmospheric pressure non-equilibrium plasma jets in surface processing of materials.
With the strong thermal effect in the surface as the dominating feature, IPIB is an ideal technique for flash-heating surface processing of materials, especially for metals and alloys.
Atmospheric pressure non-equilibrium (cold) plasma jet technology received enormous attention in surface processing of materials in the last two decades, and still continues nowadays to attract growing interest.
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These furin inhibitors, however, were highly potent in blocking the furin-dependent cell-surface processing of anthrax protective antigen-83 both in vitro and cell-based assays and in vivo.
The detected minuscule cell-surface furin levels are grossly insufficient to accomplish the cell-surface processing of anthrax PA83.
In this context, this work studies the effects of near-surface processing on the properties of AlGaN/GaN heterostructures, combining conventional electrical analyses of HEMTs with advanced nanoscale characterization techniques as transmission electron microscopy (TEM), atomic force microscopy (AFM) and conductive atomic force microscopy (C-AFM).
The effects of near-surface processing on the properties of AlGaN/GaN heterostructures were studied, combining conventional electrical characterization on high-electron mobility transistors (HEMTs), with advanced characterization techniques with nanometer scale resolution, i.e., transmission electron microscopy, atomic force microscopy (AFM) and conductive atomic force microscopy (C-AFM).
In summary, a nanoscale approach was used to monitor the impact of near-surface processing on the electrical and structural properties of AlGaN/GaN heterostructures.
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