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A decrease in surface potential due to PMMA residues and an increase in surface potential near wrapping boundaries are the main reasons for the variation in photovoltaic parameters.
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We hence think that the LCD appears due to the adsorption of water, which increases in residence time on the surface with potential due to the water-surface interaction.
The results show that the first anodic process in the active region corresponds to the formation of a SnO·nH2O prepassive layer that is removed upon increasing the applied potential due to surface etching occurring at the metal/oxide interface.
In general, the magnitude of the surface potential changes appear to be due to a complex interplay of effects arising from the chemical nature of the dopant ion and the polymer.
In this work, the authors have developed a composite low frequency noise (CLFN) model capable of modeling flicker noise in the Si/SiO2 region that is affected by the modulation of surface potential by the secondary body due to the formation of parasitic bipolar and pn junctions between the channel region to the secondary body.
Electrochemical analyses of the dark current voltage curves and Mott Schottky plots show shifts of the flatband potential due to the surface conditioning.
Surface potential barrier in semiconductors is formed due to charges trapped in surface states.
This region has a high electropositive surface potential intensity (see Fig. 6C) due to the number of basic residues present.
Thus, the effect of the electrical surface potential is far weaker than that due to surface topology and not sufficient to explain the presence of the high Ca2+ concentrations.
This model concludes that higher viscosity droplets travel more slowly, and droplets with lower surface potential actually induce faster particle movement due to ions being drawn into the double layer, which decreases polarization effects.
It followed that the unexpected decrease of the oxide-film thickness with increasing temperature on Al{1 1 1} is due to a slow increase of the (relatively low) activation energy barrier for cation transport in combination with a constant kinetic potential due to the surface-charge field within the amorphous oxide-film regime (up to T ⩽ 450 K).
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