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Methane dissociates on a heated surface of diamond.
Also, the nucleation surface of diamond was revealed.
This includes 13C inside diamond or nuclei in biomolecules on the surface of diamond with shallow implanted NV centers.
The threshold erosion time, to maintain the transmission at 10.6 μm still above 60%, was 60 s and 300 s for nucleation and growth surface of diamond films.
The manuscript shows that nano-engineering the surface of diamond particles prior contacting the liquid metal strongly enhances the Thermal Conductivity (TC) of Al/diamond composites.
Copper is introduced by pure powder and secondary deposited coating (a tungsten based layer is coated directly on the surface of diamond particles), respectively.
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In this paper, the potential influence of thickness of resist and multi-step processing using IBP on surface roughness of diamond turned surface was experimentally studied.
Long time processing with ion beam has marginal effect on the surface roughness of diamond turned surface once the resist is removed.
Various resist of thickness (240 nm, 380 nm, 700 nm) were spin coated on diamond turned NiP sample D. The surface roughness of diamond turned surface is Rq 6.56 nm (RMS).
It has been shown that IBP is able to decrease the surface roughness of diamond turned NiP surface to the ~ 30% of the initial surfaces after one step.
From this picture, the surface quality of diamond films for 24-h growth is good and the surface roughness is only 89.87 nm.
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