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ITO substrates with a sheet resistance of 15 Ω/sq.
Substrates with a bulky substituent apparently showed lower activities.
PDMS substrates with a thickness of 500 μm were prepared by controlling the spinning speed.
p-Si (100) substrates with a resistivity of 8~12 Ω cm.
A model was developed to estimate the Ge content on substrates with a global design.
Monolith substrates with a high cell density showed faster light-off for a model reaction.
P-type Si 001) substrates with a resistivity of 1 10 Ω cm were used to grow QDs.
The highly transparent UNCD films were grown directly on glass substrates with a low glass transition temperature (Tg 557°C).
The AAO template was obtained by etching away the underlying aluminum substrates with a mercuric chloride solution.
Si 001) substrates with a 200-nm-thick SiO2 layer grown by plasma-enhanced chemical vapor deposition technique.
The air rods arrays were fabricated using EBL on quartz substrates with a 15 nm layer ITO for conduction.
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