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The silicon substrates were placed 8 cm above the target surface.
Substrates were placed along the anode axis at a distance of 11.5 cm from the top of the anode.
After nanodiamond monolayer seeding and functionalisation, substrates were placed in 24 well tissue culture plates, sterilized for 30 minutes in 70% ethanol and washed three times in phosphate buffer saline (PBS).
The substrates were placed at the radio frequency electrode and the ion bombardment caused by direct-current self-bias was suppressed by using high pressure of 50 Pa.
The depositions were realized by an experimental combinatorial approach: five substrates were placed linearly in front of a circular segmented target consisting of a metallic Cr and Zr half plate.
The substrates were placed downstream at zone 2 °C00 °C).
The substrates were placed downstream from the precursor.
Coated substrates were placed inside a sputtering machine.
The resulting pellets and substrates were placed under electron beam evaporation gun (EDS-160).
Ag-covered Si (100) substrates were placed in a colder region of the furnace.
Si wafers, used as deposition substrates, were placed on the center of the substrate mount.
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