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The cleaned hot substrates were immediately used for dip-coating.
Subsequently, the substrates were immediately transferred to the PEALD (Picosun SUNALETM R-200) chamber.
The substrates were immediately transferred to the sputtering chamber (base pressure 3 × 10-7 mbar) for growth of AZO overlayers.
Finally, the resultant substrates were immediately put into EG for 30 min and then dried in the oven at 120°C for 15 min.
After blow drying with nitrogen, the substrates were immediately immersed in aqueous solution of 5.25 M HF and 0.02 M AgNO3 in a Teflon vessel for a galvanic displacement reaction at room temperature.
After etching, the substrates were immediately loaded into the ultra-vacuum preparation chamber and degassed for 48 h at temperature of 200°C prior to an annealing process at 600°C for 30 min. The temperature was measured using an optical pyrometer with an accuracy of ±25°C.
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After cleaned by RCA standard cleaning process, the substrates are immediately loaded onto the reactor chuck in the PEALD system and pumped down to the system base pressure of ~0.15 Torr.
The nitrogen ions and silver particles arriving at the exposed silicon substrate were immediately neutralized since the silicon substrate was conductive.
Mycelium and remaining substrate were immediately frozen in liquid nitrogen and stored at −80 °C before RNA extraction.
After cleaning, the substrate was immediately transferred to a BENEQ TFS-200 ALD reactor where HfO2 and HfAlO thin films were prepared at 300 °C.
Some of the acid-polished substrates were treated immediately by anodization.
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