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Overall, convenient monomer preparation coupled with attractive physical properties makes poly endo-NDI s very interesting for poly endo-NDI scations such as optical films and flexible substrates for optoelectronics.
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I V characteristic analysis was used to determine turn-on voltage of the materials for optoelectronics.
Therefore, rubrene crystals and nanostructures have been intensively studied for optoelectronics applications [22 24].
The combination of PAD and ALD technique can be used to prepare p-type ohmic contacts for optoelectronics.
The membrane exhibits visible light transmittance (∼40%) and UV absorption (∼99%) with good flexibility, which is favorable to integrate with substrates in optoelectronics.
Here, we suggest a very low resistance transparent electrode (2.3 with a high transmittance (90%) for optoelectronics applications.
This kind of material generates thermally reversible material for optoelectronics based on room temperature self-assembling block copolymers matrices.
MoS2 also shows great promise for optoelectronics [14, 15] and energy harvesting [16, 17] and other nanoelectronic applications.
Polyarylpyrazolines (PAPF, PTPF) containing various aryl substituents emit with blue and green light makes them suitable for optoelectronics applications.
For optoelectronics, wurtzite ZnS is more desirable because its luminescent properties are considerably enhanced than sphalerite [21].
Substantial increase in the refractive index, which could be attractive for optoelectronics applications, was obtained at moderate rf plasma processing powers/times.
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