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Organic transistors were fabricated on Si substrates by using a bottom-gate top-contact (BGTC) structure.
In summary, the γ-In2Se3nanorods were successfully grown on Si (111) substrates by using MOCVD.
ZnO films were prepared on p-Si (111) substrates by using atomic layer deposition.
ZnO NW CdO composite structures were fabricated on silicon substrates by using a two-step process.
Nanostructured thin films can be fabricated on different substrates by using different methods.
In summary, Ce-doped ZnO NRs were grown on Si substrates by using the hydrothermal method.
We infiltrated porous substrates by using several operating states and compared the results with standard processes.
We obtained these spectra of the nanorods after separating them from their respective substrates by using an ultrasonicator.
The sample was grown on semi-insulating GaAs (001) substrates by using the solid-source molecular beam epitaxy (MBE).
We report graphitic carbon growth on crystalline and amorphous oxide substrates by using carbon molecular beam epitaxy.
The NWs were grown on Si substrates by using a chemical vapor transport process using SiCl4 and ErCl4 as precursors.
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