Sentence examples for substrates after a from inspiring English sources

Finally, an optimized three step process was developed to form monolayer continuous graphene of high quality, successfully transposed to 7 × 7 cm2 substrates after a reactor scale-up.

Furthermore, the formation of such small nanowires was more energetically favorable than the layer-by-layer growth during Ge deposition on vicinal substrates after a critical thickness [20].

Figure 2 SEM images of ZnO nanostructures synthesized on FTO-coated glass substrates after a 30, b 80, and c 100 min at the furnace temperature of 950°C, 760 Torr, and Ar flow rate of 70 sccm.

Legumain or asparaginly endopeptidase (AEP) is a lysosomal cysteine protease with a high level of specificity for cleavage of protein substrates after an asparagine residue.

Figure 2 shows the FESEM image of AAO masks supported on Si (100) substrates after depositing a 30-nm-thick Fe (a), Au (b), and Pt (c) film at room temperature.

This permits us to rule out in DyP an activation mechanism similar to that of T. cervina LiP, which enabled a tyrosine residue to oxidize high-redox-potential substrates after forming a reactive adduct with VA [ 54].

The nanowires produced were transformed to elliptical shapes on the Si substrate after a solvent development process.

When the bonding layer for the DLC coating case was Si-based, it could not prevent crack propagation into the substrate after a certain number of test cycles.

The XPS studies revealed that: (i) a continuous, stable HA coating fully covered the titanium substrate after a growth period of 13 h without SBF replenishment; (ii) thicker HA coatings about 1 μm in thickness resulted after a growth period of 21 days, both with and without SBF replenishment; and (iii) the Ca/P ratio at the surface of the HA coating was significantly lower than that in its bulk.

In addition, passivation of the substrate after a long period resulted in a slightly flatter surface (from 2.87 ± 0.28 nm to 2.74 ± 0.34 nm for the uncleaned, 2-year-old sample).

The status of grain coalescence (γ g) was quantified by calculating the exposed area of the Si substrate between the grains within the Sn strip divided by the original area of the Sn strip by using software (Polygonal Lasso Tool in Photoshop) analysis of scanning electron microscope (SEM) images (γ g = exposed Si substrate after a RIE process/original area of Sn strip before a RIE process).