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The oxygen pressure during the growth was 37 mTorr and the substrate temperature was 720 °C.
The oxygen pressure during the growth was 37 mTorr and the substrate temperature was 600 °C.
pulsed bias conditions and substrate temperature.
The substrate temperature remained below 373 K.
The oxygen pressure during the growth was 1 × 10−6 Torr and the substrate temperature was 760 °C.
Obtained structures depend on the substrate temperature.
The microhardnesubstrateasured using temperature method.
bias voltage, substrate temperature and methane flow.
The substrate temperature was kept between 70 and 200 °C.
Substrate temperature and sheet charge exhibited an inversely proportional relationship, where increasing substrate temperature resulted in decreasing sheet charge values.
The deep substrate temperature (at 200 cm) was assumed to be the mean annual air temperature, based on the monthly daily maximum and minimum air temperatures.
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