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The vertical dimension is defined by deep backside SRIE through a 300 μm thick GaAs substrate to the AlGaAs etch stop layer, hence the structure thickness is precisely determined by the thickness of MBE-grown GaAs layer over this etch stop layer.
calculated as a function of the structure thickness.
XRD measurements proved the monotonous decline of the lattice parameter with increasing structure thickness.
Table 1 in Additional file 1 shows the porosity and mean structure thickness of all samples.
as a function of the structure thickness is shown in Figure 7B.
Figure 1 Dependence of the gold structure thickness on sputtering time.
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Figure 6 Transmission spectra of gold layers for different structure thicknesses as indicated in the figure.
Figure 4 Temperature dependence of the sheet resistance for two different structure thicknesses indicated in the figure.
The temperature dependence of the sheet resistance for two particular structure thicknesses is displayed in Figure 4.
was detected in the case of Au structure thicknesses ranging from 2 to 30 nm, which corresponds with the sputtering times between 4 and 150 s.
The following parameters were evaluated: vascular hyperplasia, perivascular lymphoplasmocytic cell infiltrates, diffuse lymphoplasmocytic cell infiltrates, follicular structures, thickness of the synovial lining layer, macrophages, polymorphonuclear cell infiltrates, fibrinoid necrosis, and fibrosis.
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