Sentence examples for structure devices from inspiring English sources

A power conversion efficiency close to 13% in MAPbI3 planar structure devices was obtained using these amorphous carbazole-based HTMs.

The latter has a good correlation to the corresponding photocurrent differences obtained in the normal and inverted structure devices.

This work is expected to provide some guidance to the design and performance improvement of MFIS structure devices.

Conventional structure devices with Al as electron extraction layer were also compared showing how the improvement achieved with the inverted architecture is surprisingly higher.

It is expected that this investigation may offer some useful guidelines to the design of MFIS capacitor and other MFIS structure devices.

Such design results in an open circuit voltage (Voc) of 1.07 V, a short-circuit current (Jsc) of 21.93 mA/cm2, and a fill factor (FF) of 77.9%, corresponding to a maximum PCE of 18.28%, in contrast to a conversion efficiency of 11.98% for the same structure devices without PEOz cathode electron-extraction layer.

fabricated and measured the vertical structure device.

Y.Y. and Q.W. fabricated and measured the lateral structure device.

The experimental results show that, comparing with the conventional structure device, the proposed structure device requires much smaller ballast resistance to achieve uniform turn-on.

We compared them with similar devices made using an Al/Cu/Ge0.2Se0.8/W structure (device type, S2).

Figure 2 shows the TEM image of the Cu/GeO x /W structure (device S1).