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(a) Energy bands of pristine S1 structure device and ideal leakage current.
Figure 2 shows the TEM image of the Cu/GeO x /W structure (device S1).
The experimental results show that, comparing with the conventional structure device, the proposed structure device requires much smaller ballast resistance to achieve uniform turn-on.
The existence of multi-quantum dots is supported by the low-temperature measurements on a field effect transistor structure device.
We compared them with similar devices made using an Al/Cu/Ge0.2Se0.8/W structure (device type, S2).
The Al2O3/HfO2/Al2O3 trilayer structure device units by ALD may be a potential candidate for oxide-based RRAM.
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As a consequence, the TiO2/CdS core-shell structure devices showed excellent stability and fast response.
The bilayer structure devices have been confirmed with evidently improved resistive switching behaviors [24,25].
A power conversion efficiency close to 13% in MAPbI3 planar structure devices was obtained using these amorphous carbazole-based HTMs.
The latter has a good correlation to the corresponding photocurrent differences obtained in the normal and inverted structure devices.
This work is expected to provide some guidance to the design and performance improvement of MFIS structure devices.
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