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The phenomena of weak and strong localization are evidence.
Occurrence of strong localization causes abrupt changes in input output directional properties.
In the class of strictly positive functions strong localization results are obtained in approximation by the Bernstein max-product operators.
If no constraints on the variance are imposed, a new type of "strong" localization occurs in self-affine systems.
A strong localization model is proposed to describe the possible processes of carrier transport, relaxation, and recombination.
Such in situ PL spectrum and mapping indicate strong localization and oscillation of photon propagation along the longitudinal axis.
The main property of SPP is strong localization of electric field with a maximum at the interface [5, 6].
The good agreement with the SdH theory suggests that strong localization effects are not significant near Bc.
At low temperatures (T), transport is governed by three-dimensional Mott variable range hopping (VRH) due to strong localization.
Sufficient conditions for strong localization (n−1 oscillation amplitudes do not exceed the given small values) are obtained.
The role of metal center can be described as weak delocalization coupled with strong localization characteristic along the organometallic backbone.
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