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In this case, the material strength of the defect-free copper should be much higher.

An examination of the strength of the defects conferred by each H3-L61X mutand and the nature of the corresponding substituted residue provides insights into structural features of the nucleosome required for proper Spt16−gene interactions and for prevention of cryptic transcription initiation events.

A fracture mechanics approach has been considered to define the stacking sequence, thickness and composition of the different laminae on the basis of the requested strength and of the defect size distribution.

The number of unengulfed corpses varies with the strength of the engulfment defect and defines a quantitative assay of engulfment abnormalities.

In contrast, if food perception (ii, above) controlled the food concentration-dependent reduction in the rate of reproduction, q, then no relationship between strength of the pharyngeal defects and food-dependent reduction in fecundity would be observed.

Rough estimations of relative pinning strength of the basic crystal defect for each specific type of twin microstructure were done.

The strength of the disclination-type defect at the triple junctions leading to brittle fracture at the grain boundaries was estimated based on the theory of strain gradient plasticity.

To verify that the tarsal joint phenotype of fz mutations correlates with the strength of the ommatidial polarity defect, eyes from three mutations isolated in the screen that gave different strength tarsal phenotypes were sectioned.

The physical entities in the present scheme that characterize the strengths of the phonon-defect, phonon-electron, and phonon-phonon scattering lead to a result that successfully retrace the experimental curve.

While estimating the temperature-dependent thermoelectric power of Rb3C60, we make use of the transport parameters which characterize the strengths of the phonon defects, phonon-grain boundary, phonon-phonon, and phonon-carrier scattering processes as Dphd = 3.1 × 10−9 K−3, Dphgb = 2.5 × 10−2 K−6 s−1, Dphph = 2.3 × 10−3 K−6 s−1, and Dphe = 5.3 K−6 s−1, respectively.

The ion implantation had little effect on the strength of the particles, indicating that the defect induced by the implantation does not directly determine the strength of the Al2O3 particles.

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