Sentence examples for strained length from inspiring English sources
The phrase "strained length" is correct and usable in written English.
It can be used in contexts where you are describing a length that has been stretched or is under tension, often in a physical or metaphorical sense. Example: "The strained length of the rubber band made it difficult to use effectively in the experiment."
In numerical examples, the stiffness of dropper is updated in each time step by comparing the initial length with the strained length.
The former can be used to calculate the strained length of each hanger, which together with the corrected hanger tensions determine the corrected unstrained hanger lengths.
By defining the stiffness component as the ratio of infinitesimal load increment to infinitesimal increase in length, explicit entries of the tangent stiffness matrix are derived through equating the total differentiation of the strained length and the elastic elongation of the cable.
The electric power generated from the piezoelectric nanostructures was affected by the piezoelectric coefficient, dielectric constant, and strained length of the nanowire[9].
Exactly the same behavior is found in technical mechanics for fibers of finite length embedded in a strained elastic matrix (Hsueh, 1989).
In particular, we detail the excellent performance of strained Si0.6Ge0.4 and sSOI down to 30 nm gate length.
This chapter consisted of "strained" structures grown with varying QW and intrinsic region lengths, experimentally evaluated under a solar spectrum.
Stress distributions in a strained Ge NMOSFET with SiGe-alloy source/drain stressors and various lengths and widths are studied using 3D stress simulations in this work.
Nevertheless, OLF likely shares structural features such as similar length or twist of its β-strands, and/or the unusually strained torsion angles in a β-hairpin.
Therefore, axial bond length variation sensitive to core and radial bond length variation sensitive to surface of strained nanowire of different diameters [30, 50] can cause the shifting of band-gap values.
This trend was maintained down to the shortest channel lengths studied here and resulted in ION IOFF characteristics that were competitive with contemporary uniaxial strained Si channel devices.
