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The mismatch in lattice constant between the substrate material and the epitaxial material results in a highly strained layer.
Thus, we consider that the In atom in the InGaN strained layer might diffuse into p-type GaN layer during the annealing processes.
It is known that the InGaN strained layer can enhance the tunneling transport from the ITO to the p-type GaN layer [16,18].
Strained layer superlattices have been of unique interest due to their ability to tune the band gap, which depends on the strain at the interface.
Strained layer GaInAsSb/AlGaAsSb quantum well lasers operating near room temperature with emission wavelengths up to 2.26 μm and a cw output of 240 mW were demonstrated.
We report on heterostructure bandgap engineered midwave infrared photodetectors based on type-II InAs/GaSb strained layer superlattices with high operating temperatures.
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Initially it was thought that if oxide was made thin enough, it might form a strained-layer super-lattice.
We report on the growth and characterization of strained-layer InAs/Ga1−xInxSb superlattices for long-wavelength photodetectors.
(3) 3D nanostressors that are a natural consequence of strained-layer growth produce local strain in freestanding NMs, and therefore local variations in the band gap of Si.
Strained-layer QWs, such as InGaAs/GaAs and InGaAs/InP, have become the workhorse materials for near-infrared diode laser sources.
The ISC0903 is a 320 × 256, standard format, two-color CMOS readout integrated circuit (ROIC) designed for strained-layer superlattice (SLS) detectors.
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