Sentence examples for strain layer from inspiring English sources

A structural characterization taking into account asymmetrical strain, layer tilting, and relaxation enables an accurate determination of the average lattice constant of the active region and the composition of the cladding layers.

We first note that, unlike those reported by Xie et al. [18] where the Ge islands have been deliberately manipulated to nucleate on the intersections of misfit dislocation networks generated at the interface of an underneath SiGe strain layer and Si substrate, the formation of the present SiGe island array must have arisen from very different mechanisms.

The critical thickness, characteristic for the lattice-mismatch parameter, plays a key role in the growth of strain layers.

Strained layer superlattices have been of unique interest due to their ability to tune the band gap, which depends on the strain at the interface.

We report on fabrication of 320 × 256 dual-band (mid-/long-wave infrared) type-II InAs/GaSb strained layer superlattice (T2LS) focal plane array (FPA) with pBp architecture.

Strained layer GaInAsSb/AlGaAsSb quantum well lasers operating near room temperature with emission wavelengths up to 2.26 μm and a cw output of 240 mW were demonstrated.

Energy-band offset induced by SiGe strained layer, short-channel effect and drain-induced barrier lowering effect are taken into account in the model.

We report on the design, growth, fabrication and characterization of dual-band (long-/long-wave infrared) type-II InAs/GaSb strained layer superlattice (T2SL) detectors with pBp architecture.

We report on heterostructure bandgap engineered midwave infrared photodetectors based on type-II InAs/GaSb strained layer superlattices with high operating temperatures.

We have investigated the electrical and optical properties of an nBn based Type-II InAs/GaSb strained layer superlattice detector as a function of absorber region background carrier concentration.

We have investigated various passivation techniques for type-II InAs/GaSb strained layer superlattice (SLS) detectors with p-i-n and PbIbN designs with a 100%-cut-off wavelength of ∼12 μm at 77 K.