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Figure 6 I D - V D characteristic of uniaxial strained AGNRs model for different strain effects compared to unstrained AGNRs.
Direct in situ ARPES studies on strained LSCO-214 films show striking strain effects on the electronic structure.
Figure 4 Study of strain effects on the magnetic behavior.
Our eight-band model includes the strain effects.
Therefore, an understanding of the strain effects is highly essential.
The strain effects on the two diffusion mechanisms are different.
The elastic strain effects of photocatalysis were also investigated.
Many efforts have been devoted to tackling the strain effects within epitaxial systems [22 29].
For an accurate analysis for size and strain effects, the instrumental broadening must be accounted.
In almost all cases, line broadening occurs due to simultaneous size and strain effects [23].
Strain effects due to the lattice mismatch between InGaAsN and GaAs are also taken into account.
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