(a) Transfer characteristics show steep subthreshold characteristics with drain-voltage dependent threshold voltage shift.
Steep switching characteristic can be acquired because of the abrupt switching characteristic of VO2.
On the other hand, phase FET uses the "negative (differential) resistance" effect of threshold selectors for implementing the steep switching characteristic.
Both the suppression of off-state leakage current and steep switching characteristic can be achieved, simply by connecting the TS device in series to baseline transistor.
In the middle of 2010s, after the first introduction of resistive switching material-based phase FET, the steep switching characteristic of phase FET was experimentally demonstrated.
Simply including either single ferroelectric oxide layer or threshold selector, we can make conventional field effect transistor to have super steep switching characteristic, i.e., sub-60-mV/decade of subthreshold slope.
into the hafnium oxide [40, 41]. Lee et al. have announced that it was possible to verify the steep switching characteristic of NCFET with 1 nm-thick HfZrOx ferroelectric layer [42].
Although it does not show conspicuous improvement of on/off-current ratio and the TS device used in [92] has relatively high off-state leakage current (~ 1 μA), the steep switching characteristic with such a low off-state leakage current is successfully acquired.
For anisotropy measurements, the steep decrease characteristic of the solid to liquid phase transition was only seen for laurdan and M-laurdan, whilst MoC-laurdan did not show any significant change of anisotropy induced by the temperature, and C-laurdan only to a reduced extent.
The steeped output characteristic control circuit is designed based on peak current-mode control and one cycle control methods An adaptive arc length control method is put forward and introduced based on a digital signal controller (DSC).
