The sizes of the individual electrodes in the probes used for the approach curve experiments were calculated from the steady-state (bulk) generation and collection currents, as described above.
Although this may appear as a paradox, it can be explained by the different processes which control gas transfer throughout the Stromboli conduit system, namely, slug formation and ascent versus steady state bulk transfer of volatiles.
The damaged states in bulk states are mainly vacancy and interstitial defects.
A new representation group G′ is constructed to deal with transitions between surface states and bulk states.
The resulting Stress Discontinuity model can fully characterise active and passive stress states within bulk material.
To differentiate these interfacial states from bulk phases, the term "complexion" has been introduced.
The radiation damage end states in bulk Si and Ge are mainly FP defects, i.e., vacancy and interstitial defects.
At present the stage of experimental and theoretical investigations of Landau-like states in bulk semiconductors and their heterostructures, may be considered completed.
In those fields, the spin-orbit coupling (SOC) plays a key role on the properties of spin states in bulk and low-dimensional semiconductor materials.
In addition, etching process may introduce more surface states and bulk defects resulting in a wide band of visible spectrum [13].
However, the radiation damage end states in bulk Ge and Si/Ge SL are different, and some antisite defects are created in Si/Ge SL structure.
