Sentence examples for standard cleaning from inspiring English sources
Samples were cleaned using standard cleaning solution (SC1 and SC2) and then polished in a high concentration of KOH solution at 75 °C for 2 3 min to remove the damaged layer.
Before each deposition the substrates were cleaned using a standard cleaning procedure using piranha solution.
The Si substrate was cleaned by the standard cleaning process, and then, it was laid above the Zn powders.
After cleaned by RCA standard cleaning process, the substrates are immediately loaded onto the reactor chuck in the PEALD system and pumped down to the system base pressure of ~0.15 Torr.
N-type single-crystal silicon wafers (100) with a resistivity of 6 to 8 Ω cm were cleaned by RCA standard cleaning procedure with each step for 15 min. After cleaning, the wafers were etched with HF in order to remove the unwanted native oxide layer.
In this study, the samples were immersed in molten KOH solution at 633 K for 2 min, and then, the standard cleaning steps were used to clean the sample surface.
The experiments started with the removal of saw damage to the silicon wafers using an acidic etching, HF HNO3 (1:10 in volume) for 10 min. Followed by the RCA cleaning procedure, standard cleaning-1 with NH4OH H2O2 H2O (1 1 5 in volume) at 80°C for 30 min and standard cleaning-2 with HCl:H2O2 H2O (1:1:5 in volume) at 80°C for 30 min were performed to remove organic/inorganic contaminations.
Standard manual cleaning included cleaning visible dirt then soak and-wipe cleaning with Dispatch® (The Clorox Company, Oakland, CA) disinfection solution.
The glass substrates were cleaned with standard RCA cleaning processes to remove the native oxide and particles.
First, the as-grown nanowire sample is cleaned through standard solvent cleaning using acetone and isopropyl alcohol followed by nitrogen blow dry.
The substrates used in the experiments were 6-inch p-Si(100) wafers which were cleaned using standard RCA cleaning procedures to remove chemical impurities and particles.
