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The temperature profile of the film stack structure is simulated by ANSYS software.
It was found that phase transition and recrystallization during heating completely changed the stack structure.
However, extremely long and/or thick ducts lead to a bulky system and may be prohibited by the stack structure.
Finally, the paper deals with possible errors in determining the actual seismic resistance of the stack structure.
Therefore, it is concluded that oxidation during oxygen-stuffing processes provides a means to inhibit diffusion in thermal stress processes, and maintains integrity of the stack structure.
This work can provide a valuable guidance in the design of stack structure for a high reliability of fuel cell stack.
Similar(23)
Subsequently, the different stack structures were fabricated, and their structural and electrical properties were analyzed versus annealing treatment.
These two different gate stack structures would have an impact on device reliability.
Khan et al. discussed the reliability issues with the aforementioned two different gate stack structures [52].
In addition, SiN/SiO2 stack structures have wide applications in non-volatile charge memories (NVMs).
A strong visible PL at room temperature has been observed for all the stack structures.
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