Sentence examples for stack for all from inspiring English sources

The plot shows the volumetric energy density and power density of the stack for all the devices tested.

Charge discharge cycles are carried out both in a small area single cell and in a 3-cells short stack for all samples.

Abstract: Pantev, Toën, Vezzosi and Vaquié (arXiv 1111.3209) introduced the notion of k-shifted symplectic structure on a derived scheme or derived stack, for all integers k, where 0-shifted symplectic structures on derived schemes are just classical algebraic symplectic structures on classical smooth schemes.

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The ultrasonication promoted the disordering of the graphite tridimensional stacking for all solvents used, with the strongest effect in acidic medium.

For notational simplicity, we let X=[x i,j ] i∈A,j∈B denote the matrix generated by column-wise stacking for all i in A and row-wise stacking for all j in B. Expressions [x i,j ] i∈A and [x i,j ] j∈B respectively denote column-wise stacking and row-wise stacking.

For system G_CG_G/C_C, there is little predicted difference in the free energies of coaxial stacking for all three possible arrangements.

In addition, single example image stacks for all fru+ clones in this manuscript, as well as template brains and relevant software tools, can be downloaded from http://flybrain.stanford.edu.edu

While GC pairing provides stronger interactions (three hydrogen bonds) than AT pairing (two hydrogen bonds, [ 45, 50]), the purine-purine (RpR) stacking (for all possible dinucleotide combinations of A and G) has lower energy than stacking of other dinucleotides [ 48, 50].

How do the plays stack up?For all its supposed daring in portraying the dysfunctionality of some pretty important people, "Calico" emerges as a ham-fisted attempt to ride piggyback on a few big literary names.

The results show that the work of adhesion (Wad) of the HCP (interfacial Ti(C) atom located on top of C(W) atom in second layer of WC) stacking interface is larger than those of the Hole (interfacial Ti(C) atom located on top of vacancy of WC), OT (interfacial Ti(C) atom located on top of C(W) atom in surface of WC) stacking interfaces for all the terminations.