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Spin torque switching with the giant spin Hall effect of tantalum, Luqiao Liu, Chi-Feng Pai, Y. Li, H. W. Tseng, D. C. Ralph, and R. A. Buhrman, Science 336, 555-558 (2012).
Liu, L. Q., Lee, O. J., Gudmundsen, T. J., Ralph, D. C. & Buhrman, R. A. Current-Induced Switching of Perpendicularly Magnetized Magnetic Layers Using Spin Torque from the Spin Hall Effect.
Spin Torque Ferromagnetic Resonance Induced by the Spin Hall Effect, Luqiao Liu, Takahiro Moriyama, D. C. Ralph, and R. A. Buhrman, Phys.
Spin torque is basically another way of writing data to a memory unit, utilizing the electron spin in a polarized current to switch a thin magnetic layer.
When α is zero, the axial spin torque component vanishes.
Ryu, K. S., Thomas, L., Yang, S. H. & Parkin, S. Chiral spin torque at magnetic domain walls.
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Železný, J., Wadley, P., Olejník, K., Hoffmann, A. & Ohno, H. Spin-transport and spin-torque in antiferromagnetic devices.
Emley, N. C. et al. Time-resolved spin-torque switching and enhanced damping in permalloy/Cu/permalloy spin-valve nanopillars.
We show micromagnetic simulation results for spin-torque nano-oscillator (STNO) with point-contact geometry.
A new data storage technology, spin-torque magneto-resistive RAM, combines the best features of the two most commonly used forms of memory: DRAM and flash.
A network of four spin-torque nano-oscillators can be trained in real time to recognize spoken vowels, in a simple and scalable approach that could be exploited for large-scale neural networks.
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