Fig. 12 The SHA power spectrum of our magnetic thickness model.
b RBS spectrum of 30 nm thickness film, before and after two times irradiation by 80 keV Ar+ ions at different fluence values.
A 1 nm thick elemental X-ray absorption profile was calculated with known chemical composition and density for each reference compound; each reference spectrum was scaled to its elemental X-ray absorption profile to obtain a reference spectrum of 1 nm thickness, which was used for the linear combination fitting [74].
The SHA power spectrum of our magnetic thickness model (blue line) together with its uncertainty estimation (light blue shaded curve), of the crustal layer of the model CRUST1.0 (Pasyanos et al. 2014) (magenta line) and of a recent version of the hybrid model of (Fox Maule et al. 2009) (cyan line).
When plotting the spectra of different thickness layers, it can be seen in Fig. 9a that the wavelength, at which the reflectance of a particular thickness layer starts to increase significantly, is thickness-dependent.
As a result of optical modeling of the transmission spectrum, the thickness of spacing layer is derived to be 6510 nm corresponding to 21λ/2 at λ = 620 nm.
GEANT4 code was applied to simulate the background radiation spectrum at different thicknesses of lead.
Transmittance spectra with variation of thickness of electrolyte.
b Absorption spectra versus thickness of the top TiN nano-disks with p x = 200 nm, d = 120 nm, and t 2 = 50 nm.
c Absorption spectra versus thickness of the SiO2 layer with p x = 200 nm, d = 120 nm, and t 1 = 50 nm.
From the absorption spectra versus thickness of SiO2 spacer layer in Fig. 3c, it is seen that the central wavelength of the resonance absorption peak is redshifted with increasing thickness of SiO2, and the optimized thickness is t 2 = 50 nm while the rest parameters were set at p x = 200 nm, d = 120 nm, t 1 = 50 nm.
