Sentence examples for spacer width from inspiring English sources

Gate length, Si-body thickness, source drain doping concentration profile, and spacer width have been varied.

The high selectivity of the sensing ensemble for d-fructose may be depended on suitable spacer width of boronic acid groups and a stable pyranose ester form of d-fructose with m-P3BQ.

Results show that lateral source/drain doping gradient along with spacer width can not only effectively control short channel effects, thus presenting low off-current, but can also be optimised to achieve high values of on-currents.

The impact of (i) lateral source/drain doping gradient (d), (ii) spacer width (s), (iii) spacer to doping gradient ratio (s/d) and (iv) silicon film thickness (Tsi), on short channel effects – threshold voltage (Vth) and subthreshold slope (S), on-current (Ion), off-current (Ioff) and Ion/Ioff is extensively analysed by using the analytical model and 2D device simulations.

The influence of spacer width, lateral source/drain doping gradient and symmetric as well as asymmetrically designed SDE regions on key analog figures of merit (FOM) such as transconductance (gm), transconductance-to-current ratio (gm/Ids), Early voltage (VEA), output conductance (gds) and gate capacitances are examined in detail.

TakingW= 0.1 μm, after 3 SPT×repetitions the spacer width should be of 12.5 nm, with minimum separation of 25 nm.

The results of the analytical model confirm well with simulated data over the entire range of spacer widths, doping gradients and effective channel lengths.

It was found that as the emitter size shrinks towards 0.1 μm the impact of changes to inside spacer and SIC width on the current gain increased.

The pressure drop through spacer-filled channel depends on the geometric characteristics: angle, mesh size and filament diameter of the spacer and height, width, length and voidage of the channel.

Undoped GaAs spacer layer of width 50 nm separate the Al0.4 GAs.6 As barriers from 2 × 1017 cm-3 n-doped GaAs layers of width 50 nm.

The width of the spacers or would be final polysilicon nanowires is in correlation with the deposited thickness of the PECVD polysilicon film and dependent on the directionality of the plasma etch.