Sentence examples for source voltage for from inspiring English sources
Organic field-effect transistors (OFETs) with regioregular poly 3-hexylthiophene) (poly 3-hexylthiophenened and fabricated aiming at the lowest P3HTible working point (i.e. thavedjusted values of gate voltage and drain–source voltage) for the use as sensor in electrolytes.
The mass spectrometer's source voltage for this application was set at 3.5 kV with scan time duration of 1 s/scan and spectra were acquired using both survey and parent scan MS methods with data dependent acquisition (DDA) setting defined by MassLynx software instrument interface.
(b) Current versus drain-source voltage for zero gate voltage.
As a function of gate-source voltage for (a) single-gate ZnO MOSFETs and (b) multiple-gate ZnO MOSFETs.
Figure 3b shows the current versus drain-source voltage for zero gate voltage for the same device.
As a function of drain-source voltage for (a) single-gate ZnO MOSFETs and (b) multiple-gate ZnO MOSFETs.
Drain-source current Ids as a function of drain-source voltage for different values of Vtg (lower graph) [22].
Figure 5 Gate-source current as a function of gate-source voltage for single-gate ZnO MOSFETs and multiple-gate ZnO MOSFETs.
Figure 4a shows current versus drain-source voltage for zero gate voltage for transferred p 6P nanofibers for BC/BG, BC/TG, and TC/BG configurations, while the inset shows the same data plotted with a different current scale.
Figure 4 Current versus drain-source voltage for zero gate voltage for (a) p 6P nanofibers transferred from mica to a transistor platform and (b) p 6P thin films for BC/BG, BC/TG and TC/BG configurations.
Using measured capacitance-voltage curves with different gate lengths and current voltage characteristics at low drain-to-source voltage for the AlGaN/AlN/GaN heterostructure field-effect transistors (HFETs) of different drain-to-source distances, we found that the dominant scattering mechanism in AlGaN/AlN/GaN HFETs is determined by the ratio of gate length to drain-to-source distance.
