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The RF plasma source power was fixed at 400 W.
Increasing the source power (or bias power) under high bias power (or source power) increased the profile roughness.
Depending on the source, Power BI can pull in this data in real time, too.
The parameter β is the ratio of the source power allocated to XD, while β ¯ = 1 − β is the ratio of the source power allocated to XR.
Meanwhile, the roughness was increased with the ion source power above 100 W.
The results shown that it is depend on the light source power.
The main result shows that BER is strongly affected by PIIN for the higher source power.
Goldak's mathematical model is used to describe the distribution of moveable heat source power.
The tool is described in general terms incorporating the randomisation of source power.
The distributions of source power can be displayed on the individual MRI images.
Source power and bias voltage are finely tuned to obtain a vertical etch profile.
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