In order to determine which region is the major source of the dislocations which will be present in an LEC grown InP single crystal, a model of dislocation generation in InP has been designed and numerically solved in the actual growth parameters and geometry.
When grain sizes are reduced to the nanoscale, grain boundaries (GB) become the dominant sources of the dislocations that enable plastic deformation.
Using a simple atomic lattice model, we show that a periodic array of misfit edge dislocation is necessary to accommodate the large volume difference at the γ α interface and this could act as a source of the edge dislocations needed to produced previously observed deformation bands.
But gridlock is not the major source of social dislocation; nor is private ownership the major source of gridlock.
Results show that there exists remarkable scatter in the microvoid growth due to random distribution of the dislocation sources or obstacles, especially for voids at the submicron scale.
The dip angles of the dislocation sources are also based on the same information.
For example, when we change the depths or widths of the dislocation sources on the block boundaries (Table 2), the values of the estimated dislocation rates should vary.
We assume that the upper and lower edges of the dislocation sources are at depths of 1 and 13.5 km, respectively.
We assumed that all of the upper and lower edges of the dislocation sources on the block boundaries are at depths of 1 and 13.5 km, respectively, but the assumption was not based on strong evidences.
The results shown in Table 2 are the estimates from the inversion, but uncertainty in block boundary locations and geometric properties of the dislocation sources would alter these estimated model parameters.
