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A FET has three terminals: source, drain, and gate.
Gate length, Si-body thickness, source drain doping concentration profile, and spacer width have been varied.
Au/Al was used as the metal electrodes for the source, drain, gate, and substrate contacts.
a Illustration in the case of zero gate voltage in source, drain, and gate area.
The source (drain) region is doped with 10−2 (dopant/atom) P (n) type impurities.
Devices with thicker substrate insulator and smaller source drain contact area give the highest frequency.
Similar(53)
Source-drain current.
Source-drain voltage.
Fig. 3 Photocurrent as a function of source-drain voltage.
Figure 3 shows the source-drain current current (Ids -source-drain voltage (Vds) curves of typIds -source-drainefore and after UV radIds -source-drain
SWCNT/BNT/HfO2-FeFET and SWCNT/BNT-FeFET show the typical p-channel transistor characteristics and saturated source-drain currents at low source-drain voltage.
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