Sentence examples for solution etching rate from inspiring English sources

The dependence of the KOH solution etching rate on the load and scanning density of the mechanical pre-processing was evaluated.

Areas mechanically pre-processed at 1- to 4-μN load exhibited an increased KOH solution etching rate due to the removal of the natural oxide layer by the mechanical action.

Since the microcracks can accelerate the diffusion of the HF solution, the etching rate of the damaged Si/Si3N4 surface with microcracks is faster than that of the original Si/Si3N4 surface.

As the bottom of the trench reaches the pure Si buffer layer, it can hardly be etched in NHH solution since the etching rate decreases to be smaller than 0.01 nm/min for pure Si [20, 21] and hence can act as a better height benchmark than the wetting layer (WL).

As stated in previous literatures [20, 21, 34], Ge can be removed in aqueous H2O2 solutions since it is oxidized by the latter and its oxide is water soluble, while Si can be removed by NH4OH solution but the etching rate decreases with the addition of H2O2.

The thick mechanochemically oxidized layer formed suppressed etching by the KOH solution and decreased the etching rate without plastic deformation[19, 20].

These thick oxide layers, which were mechanochemically formed on the areas processed at higher load, prevented the KOH solution etching and thereby decreased the etching rate.

First, we removed the natural oxide layer by diamond tip sliding at low load and then increased the etching rate with KOH solution.

However, the etching rate of H2O2/HF solution is very low (<10 nm/h)[25], and the noble metal acts as catalyst for the hole injection and thereby improves the etching rate dramatically[11].

Dry etching is a method in which a gaseous chemical etching agent is used to perform non-isotropic etching, but it is likely to destroy the surface and form defects. Wet etching uses a chemical solution to etch the surface of a semiconductor isotropically; the etching rate is a function of the temperature and concentration of the solution.

Hydrogen-termination of the Si-surface was preserved even under low anodic currents in spite of the high etching rate in alkaline solutions.