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These proof-of-concept TFETs feature junctions obtained by Solid Phase Epitaxy Regrowth (SPER).
Solid phase epitaxy regrowth is included, and also the dopants redistribution during recrystallization of the amorphized regions.
In solid phase epitaxy a thin amorphous (noncrystalline) film layer is first deposited on a crystalline substrate, which is then heated to convert the film into a crystalline layer.
Vacancy engineering has been proven to be a viable alternative to pre-amorphisation and solid phase epitaxy for creating ultra-shallow junctions.
Er-implanted Si, regrown by solid phase epitaxy at 600 °C and then subject to a rapid thermal anneal, has also been studied by time-resolved photoluminescence (PL).
Below a certain deposited nuclear energy, solid phase epitaxy (SPE) is possible and leads to recrystallisation under precise conditions (high heating rate, silicon partial pressure prescribed).
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Poly-Si thin-film solar cells fabricated on glass superstrates via the aluminium-induced crystallisation solid-phase epitaxy (ALICE) method, where an aluminium-induced crystallisation (AIC) poly-Si seed layer is thickened via solid-phase epitaxy (SPE) of a-Si H, a-Si H,estigared.
We determine the minority carrier lifetimes of nearly intrinsic Si films 1.5 15 μm thick grown by HWCVD at 300 °C on Si (100) and large-grained polycrystalline templates formed by selective nucleation and solid-phase epitaxy (SNSPE) using resonant-coupled photoconductive decay (RCPCD).
Moreover, the melting point of Ge is 475°C lower than that of Si, and solid-phase epitaxy regrowth in Ge has a lower activation energy (E Ge = 2.0 eV) than in Si (E Si = 2.7 eV), with the same pre-exponential value (about of 3 × 108 cm s-1).
It will compare the chemistry of chemical vapor deposition and vapor phase epitaxy to make solid state materials.
They include, but are not limited to, vapour-liquid-solid (VLS) [15], metal organic vapour phase epitaxy [16, 17], plasma-enhanced chemical vapour deposition [18, 19] and a simple vapour-solid process [20].
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