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Prolonged exposure of the skin to high pH stoma effluent is widely accepted as a key contributor to the onset of moisture-associated skin disease and it is our hypothesis that a "smart wafer", employing electrochemical manipulation of local pH, could mitigate some of the issues currently plaguing ostomy management.
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Waveguides optimised at 1.5 μm have been fabricated from erbium-doped Smart Cut® silicon-on-insulator wafers.
Furthermore, the effects of the handle wafer adopted in the Smart-Cut technique are examined on the splitting process.
This paper investigates the intrinsic reliability of ultra-thin buried oxides (UTBOX) integrated in the last generation of FDSOI wafers obtained by the Smart Cut™ technology.
The number of wafer solutions offered by the Smart-Cut® technology is already much greater than just SOI.
The Smart-Cut® process, based on hydrogen implantation and wafer bonding, is a generic thin layer process transfer.
The Smart Cut™ process technology was originally developed to manufacture silicon on insulator wafers (SOI).
This method allows better control of the thicknesses of the silicon and glass layers, but the etching is time-consuming and requires the costly sacrifice of a wafer for each one that is made.SOITEC's process, which it dubs "Smart Cut", is based on a discovery made by Michel Bruel, who works at LETI, a government laboratory in Grenoble.
The Smart Cut™ layer transfer technology is found to be the best method to form wafer-level GeOI structures of different diameters and thickness range down to <50 nm.
This paper is intended to demonstrate through miscellaneous structural results how a layer transfer technique such as the Smart CutTM technology can be used to obtain good quality tensile-strained silicon on insulator wafers.
The miniaturization of the sensors from the dime-sized wafers that had been constructed in the group for many years to the micrometer-sized particles of smart dust led to new uses for porous silicon sensors.
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