Sentence examples for simple model considering from inspiring English sources

Experimental results have been reproduced by a simple model considering a torque balance on the chainlike aggregates.

A simple model considering the bubble evolution as a stochastic renewal process is presented.

In this paper, a simple model considering both processing and propagation delays is developed and a method to evaluate the performance of a routing mechanism is presented.

A simple model considering the fundamental mode TE10 of a rectangular waveguide whose largest dimension was the average cell diameter was proposed to predict minima and maxima of these resonances.

The vertical dashed line shows the radius of the cluster, Rcl = 10.86 a.u. One can see from Figure4 that the behavior of the cluster-induced force in this more realistic model is similar to the simple model considered before (Figure2).

In a simple model consider an elementary act of coalescence of two particles in a solution under condition (13), when the characteristic value of the Reynolds number for thermal motion of a dissolved molecule is Re ≪ 1 [30].

Eqn. 2 shows that, in the simple model considered, the probability of detecting an XRF photon depends on different experimental aspects, and in particular on the sample absorption of both incoming X-Ray photons and emitted XRF photons (the presence of filters or the efficiency of the detector are not considered here).

We do not believe that including further details into a simple model considered here would be productive.

The need to avoid spatial ambiguity constrains the ratios r i. Again in our simple model, consider Figure 1C where the cells with the grid fields marked in red respond at scales i and i + 1.

In application to semiconductor materials, this method is used to identify intrinsic free volumes owing to simple models considering competitive channels of positron trapping from delocalized defect-free bulk states, deep ground states of positron traps (extended free-volume defects), and decaying of bounded positron-electron (positronium (Ps)) states [13,16].

In application to semiconductors, this method allows useful identification of intrinsic-free volumes owing to simple models considering competitive channels of positron trapping from delocalized defect-free bulk states, deep ground states of positron traps (extended free-volume defects), and pick-off decaying of bounded positron-electron (positronium Ps) states [1,2].