Sentence examples for silicon n from inspiring English sources

For example, the typical size of electronic devices is about 20 nm, and photonic diffraction limit is λ/2n ~ 200 nm, where λ is the telecommunication optical wavelength, and n is the refractive index of the waveguide (e.g., Silicon, n = 3.5).

The highly conductive silicon (N type) with resistance of <0.006 Ω cm was used in sandwich structures of Si/a-C N/Ti (and Al) to examine the electrical contact between the highly conductive Si/a-C N/Ti and:N films.

We can consider, for example, the case of two flat surfaces of p-doped silicon (n ≈ 5 × 1018 cm−3) [21 23] and compute the thermal conductance between them as done in Fig. 1.

A conical probe made of silicon (n = 5.476 + i0.310 at the wavelength of 408 nm) with an extremity's radius of 7 nm and a solid angle of 15° was located above the Cr (n = 1.80 + i3.61 at the wavelength of 408 nm) film.

Proton and iron implants were performed at RT and 77 K, respectively in order to effectively isolate the as-grown silicon (n-type) GaInAsN layers.

Multi-walled carbon nanotube (MWCNT) films form efficient heterojunction solar cells with n-type crystalline silicon (n-Si), due to their superior optical and electrical properties.

In this article, an underlap silicon n-channel Tunnel Field Effect Transistor (n-TFET) i.e., symmetric single-k spacer (SSS) Double Gate N-TFET (DGTFET) is proposed to improve the performance of the device by using different spacer materials.

In this study, a novel solar cell architecture using nonstoichiometric p-type NiO thin films as a hole-selective, dopant-free contact to n-type crystalline silicon (n-Si) is successfully fabricated.

Microelectromechanical (MEMS) structures consisting of surface micromachined disk resonators of phosphorous- doped hydrogenated amorphous silicon (n-a-Si H) deposited by radiofrequen-a-Si Hma en-a-Si Hchemical vapour depositedn (RF-PECVD) were fabyicated and charadiofrequency

This study was conducted in a greenhouse using hydroponics system to study the ameliorating effects of varying levels of silicon (Si) and nano silicon (N-Si) on growth and some key gas exchange characteristics of tomatoes under salt stress condition.

Fine platinum (Pt) particles were deposited electrochemically on n-type silicon (n-Si) electrodes from an aqueous hexachloroplatinic acid(IV) solution by the single potential step (SPS) and double potential step (DPS) methods.