Sentence examples for si because the from inspiring English sources

To understand peculiarities of Cu immersion deposition on the surface of PS, we firstly studied the process on the bulk Si because the surface of the PS pores presents Si nanoplanes of different crystal orientations [10].

In SL, spacer SSC may provide strain in nc-Si because the spacer SSC restrains the vertical growth of nc-Si.

However, neither the encoder nor the decoder can estimate error rates of SIs because both the original and SI frames must be available for each side.

Analyses carried out on single layers of a-Si and a-Ge show that H is released from its bond to the host lattice atom and that it escapes from the layer much more efficiently in a-Ge than in a-Si because of the smaller binding energy of the H-Ge bond and probably of a greater weakness of the Ge lattice.

However, Au has drawbacks when combined with the most popular semiconductor, silicon (Si), because Au atoms incorporated into Si induce deep level electrical defects [16, 17].

One can observe three quasi-continuous rings corresponding to various orientations of c-Si because of the presence of randomly oriented crystalline Si-np.

In addition, the behavior of the 2.2-eV peak does not seem to be related to nc-Si formation because the theoretical bandgap of the 4- to 5-nm-sized nanocrystal is only around 1.6 to 1.8 eV [28].

The PL band and Raman peak position and shape for SiNWs are similar to the c-Si substrate because the SiNW's diameter is about 50 200 nm and it is far from the quantum confinement regime.

Besides, in these SiO x films, the absorption and emission are correlated with quantum effects in Si-nc because the theoretical values of E N are similar to the approximate values of the optical band gap (Eg) that were obtained by the relationship known as Tauc plot (see Figure 3).

It shows more charge on the graphene plane than in the Si plane, because of the C/Si ratio = 2 and more extended charge distribution along the c axis for Si. Figure 1 The atomic structure of graphene/Si superlattice, with Si atoms on top, projected onto the graphene plane, overlaid with two contour plots of the total charge density.

Si-O-Si bridgings are excessively formed between the altered crystal surface and the Si-rich layer because the strength of Si-O bonding is much higher than that of Mg-O bonding.