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In the past 20 years, GaN has developed into one of the most important semiconductors after Si because of its excellent optical and electrical properties.
This is especially important for Si because of the low absorption cross section inherent to its indirect bandgap, which requires tens to hundreds of times thicker materials for complete absorption compared to direct bandgap material solar cells.
Quantum confinement effects should also be higher in Ge than in Si because of its smaller electron and hole effective masses, higher dielectric constant, and larger excitonic Bohr radius [6, 7].
Such hole diffusion is expected to be particularly significant for highly doped p-type Si because of the positive Schottky barrier height that pulls injected holes away from the metal Si interface [40].
We did not adjust for SI because of its high correlation with MCRI.
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A space-charge region accompanied by V0 (built-in potential) is formed at the interface of MLG and n-Si because of their work function difference.
One can observe three quasi-continuous rings corresponding to various orientations of c-Si because of the presence of randomly oriented crystalline Si-np.
Analyses carried out on single layers of a-Si and a-Ge show that H is released from its bond to the host lattice atom and that it escapes from the layer much more efficiently in a-Ge than in a-Si because of the smaller binding energy of the H-Ge bond and probably of a greater weakness of the Ge lattice.
It shows more charge on the graphene plane than in the Si plane, because of the C/Si ratio = 2 and more extended charge distribution along the c axis for Si. Figure 1 The atomic structure of graphene/Si superlattice, with Si atoms on top, projected onto the graphene plane, overlaid with two contour plots of the total charge density.
The octane sensitivity (S), defined as the difference between the Research Octane Number RONN) and the Motor Octane Number (MON), is of increasing interest in spark ignition (SI) engines because of its relevance to knock resistance at boosted high-load conditions.
Also, Si 2 s and Si 2p peaks disappeared in the DOPA-Si sample because of the thickness of the DOPA film, implying the well-formed DOPA layer with self-assembled monolayer [45 47].
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Justyna Jupowicz-Kozak
CEO of Professional Science Editing for Scientists @ prosciediting.com