The inset shows the dependence of Tc on BN concentration (weight %).
The lower panel shows the dependence of population of |1 on T at ΦLZS=3.6, 7.2 and 10.8 mΦ0, respectively.
Figure 2 (c) shows the dependence of the energy E on the distance z to the surface.
Figure 3 shows the dependence of the CPGE current on the gate voltage (see also Supplementary Fig. 7).
Figure 4.13 shows the dependence of encircled energy radii on off-axis angle on the four ACIS-I chips.
Figure 24 shows the dependence of i0 on the angular frequency ω of the source of alternating electromotive force.
(b) The upper panel shows the dependence of population of |1 on ΦLZS at T=20, 40 and 60 ns, respectively.
Figure 1c shows the dependence of the junction resistance with the amplitude of 100 ns voltage pulses in a Co/BFO/CCMO junction (Methods).
The theoretical model shows the dependence of the dimensionless value of water content in the bed on the dimensionless time.
Figure 4.12 shows the dependence of encircled energy radii on off-axis angle on the HRC-I with the HRMA focus at the HRC-I aimpoint.
Figure 4c shows the dependence of spectral response on polarization.
