Sentence examples for shift onset from inspiring English sources

Instead of using common sense to promote health and prevent or delay the onset of age-associated diseases, medical establishment has managed to gradually alter and destroy the natural immunity of Americans public and shift onset of diseases to younger age for increasing the population of sick people and pushing drug sale.

For example, does the altered gene simply shift onset to an earlier age or does it increase the rate at which incidence increases with age?

The blue shifted onset also reflects defective surface or heterogeneous crystalline structure, consistent with previous topography, crystallography and morphology evaluations.

The result confirms the positively shifted onset potential for In2S3/ZnO-50 In2S3/ZnO-50d to the bare INSAs NSAs as illustrated in the inset of Fig. 5a.

The negatively shifted onset potential of 0.35 V vs. RHE is obtained when Sb2S3 and rGO are participated in the WO3 electrode, as compared with those of 0.42 and 0.45 V vs. RHE for the WO3/Sb2S3 and WO3 electrodes, respectively.

The as-synthesized N-doped DTG afforded significantly improved reactivity on oxygen reduction reaction (nearly 50 mV positively shifted onset potential compared with that of pristine DTG and a current preservation of 92.8% after 16,000 s test).

Working as the photoanodes of PEC water oxidation, CdS/α-Fe2O3/TiO2 heterostucture electrode exhibits improved photocurrent density of 0.62 mA cm− 2 at 1.23 V vs. reversible hydrogen electrode (RHE) in alkaline electrolyte, with an obviously negatively shifted onset potential of 80 mV.

Modern lifestyle promotes shifted sleep onset and shifted wake up time between weekdays and weekends, producing a condition termed "social-jet lag".

The porous Bi1-xVO4 (s-m) showed the band gap narrowing of 0.08 eV, valence band up-shifting of 0.150 eV and 100 mV cathodic shift in onset potential relative to BiVO4 (s-t).

HE-PTFETs demonstrate the negative shift of onset voltage VONSET, the steeper subthreshold swing S, and the improved on-state current ION compared to Ge0.92Sn0.08 homo-PTFET.

The "V-shaped" Mott-Schottky plot and anodic shift of onset potential in I-V curves verify the characteristics of p-n homojunction.