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The resistivity was obtained by multiplying the sheet resistance with the corresponding average film thickness.
Low sheet resistance of 3 Ω/sq.
Its sheet resistance Rs, is less than 0.8 kΩ/square.
Large-area alignment of the nanotubes in these films is needed to minimize the sheet resistance.
Also, the sheet resistance decreased with decreasing process pressure.
The TCEs exhibited a sheet resistance of ∼2.5 kohm/sq.
SiO2 buffer layer leads to the lowest sheet resistance.
Figure 1 Sheet resistance.
This sample has shown lowest sheet resistance.
Hence, the reported sheet resistance value might be higher than the actual sheet resistance.
Figure 7 Comparison of lifetime and sheet resistance between wet and RIE etched emitters (a) Sheet resistance before τeff and after τeff and (b) effective lifetime sheet resistance.
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