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Figure 2 Capacitance and sheet carrier density versus gate bias.
The sheet carrier densities are increasing, with the SL period getting thick.
Figure 9 Sheet carrier density for CNT paper and CNT paper + Pt.
An optimized Al0.2Ga0.8N/GaN HEMT shows an excellent improvement in sheet carrier density and breakdown voltage.
As shown in Figure 3c, the sheet carrier densities are about the same when the periods of SLs increase.
In fact, the sheet carrier density measured using Hall coefficient is the average value of all SLs.
After annealing, the sheet carrier density decreases dramatically due to thermal diffusion effect as we discussed previously.
Improvements in DC performance of HEMTs after passivation with SiO2 and Si3N4 correspond to the changes in sheet carrier concentration.
The FCEs could be independently biased to modulate sheet carrier concentration and thereby the resistance in the ungated regions.
Hall measurements indicated a sheet carrier density of around 1.1 × 1013 cm−2 and an electron mobility of 1,800 cm2/V·s at room temperature.
However, the estimated sheet carrier concentrations were 9.96 × 1010 and 1.17 × 1012 cm-2 for the undoped and doped graphenes, respectively.
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