Gas settings were sheath gas pressure, 40 (arbitrary units); auxiliary gas pressure, 35 (arbitrary units); ion sweep gas pressure, 0 (arbitrary units).
Nitrogen gas was used as a sheath gas at 650 L/h.
Nitrogen sheath gas was set at a flow rate of 30 L/min.
Nitrogen was used as the sheath gas (35 psi) and the auxiliary gas (5 psi).
A dual RF inductively coupled plasma jet without the sheath gas was designed to grow diamond.
The electrospray ionization settings were gas temperature, 120 °C; gas flow, 15 L/min; nebuliser gas, 30 psi; sheath gas temperature, 375 °C; sheath gas flow, 12 L/min; capillary voltage, 3500 V; nozzle voltage, 300 V.
The source ionization conditions were: gas temp: 280 °C, drying gas: 11 L/min, nebulizer: 30 psi, sheath gas temp: 300 °C, sheath gas flow: 12 L/min, Vcap: 3000 V, nozzle: 0 V, fragmentor: 150 V.
APCI source parameters were: vaporizer temperature = 400°C; sheath gas flow = 32 arbitrary units, auxiliary sheath gas flow = 5 arbitrary units; discharge current = 4 μA; capillary temperature = 250°C, capillary voltage = 30 V, tube lens = 70 V.
Source parameters consisted of the following: gas temperature 325°C; sheath gas temperature 350°C; sheath gas flow 11 L/min; drying gas flow 5 L/min; nebulizer 35 psig, fragmentor 100 V and capillary voltage 4000 V.
The ESI source parameters were as follows: gas temperature, 300°C; gas flow, 7 L/min; nebulizer gas pressure, 45 psi; sheath gas temperature, 350°C; sheath gas flow, 8 L/min; capillary voltage, 3.5 kV.
Ionization was performed under electrospray conditions (flow rate 1.0 μL/min, spray voltage 4.8 kV, sheath gas 40 arb).
