The core idea of the method is to postprocess the sequence of interfaces generated by the additive Schwarz wave relaxation solver.
However, the results of molecular dynamics simulations of sliding at γ/γ interfaces in lamellar TiAl alloys presented here suggest that important factors, namely the sequence of different interface types as well as the orientation of in-plane directions with respect to the loading axis, have to be included into meso-scale models.
While the sequence of this interface is well conserved in all insects, in Mecopterida, the loop L8-9 of USP interacts with the helix H7 of ECR, creating a symmetric and larger heterodimerisation surface [ 8].
Moreover, the construction of enrichment functions in this method is independent of the number and sequence of materials interfaces introduced to the nonconforming mesh.
The identification of interface sequences may also help in the de novo design of functional proteins and peptides.
In fact the sequence analysis interface of novPTMenzy cannot only identify different unusual PTM catalyzing domains in a protein sequence, but can also group them into different functional subfamilies using these 11 HMM profiles.
Regarding this aspect, extensive work has been performed on the study of the sequence and/or structure of interfaces, particularly on dimeric interfaces [4], [5], [6], [7]; for a review see [8], [9], [10], [11].
To obtain them, we interpret the charge transmission across a heterostructure as a sequence of an infinite number of interface scattering events including Andreev electron-hole and vice versa transformations at N/S boundaries [22, 23].
Using the B-method, we apply an incremental refinement approach to verifying a sequence of designs of the interface for the collection and storage of votes, which we prove to be correct with respect to the simple requirement that only valid votes can be collected.
The K points are 6 × 6 × 6 for the bulk and 6 × 6 × 1 for all slabs, which make the convergence tolerance of energy of 1.0 × 10-5 eV/atomaximalmal force of 0.03 eV/Å, and displacement of 1.0 × 10-3 Å. Figure 1 Atomic stacking sequence of graphene/α-SiO 2 (0001) interface without relaxation (a) and in structure A (b).
